electron tunnelling in Chinese
Translation
Mobile
- 電子貫穿
- 電子隧道效應
- "electron" in Chinese : n. 【物理學】電子。 the electron bea ...
- "tunnel" in Chinese : n. 隧道;地道;坑道;管道,煙道,風洞;【礦物】石巷, ...
- "tunnelling" in Chinese : 開挖隧道; 隧道的敷設; 隧道工程; 隧道貫穿; 隧道式轉(zhuǎn)移; 隧道系統(tǒng); ...
- "dissipative tunnelling" in Chinese : 耗能隧道效應
- "giaever tunnelling" in Chinese : 杰伯隧道效應
- "josephson tunnelling" in Chinese : 約瑟夫遜隧道效應
- "mechanization of tunnelling" in Chinese : 隧道施工機械化
- "quantum tunnelling" in Chinese : 【物理學】量子隧道貫穿〔指電子穿透勢壘的現(xiàn)象〕。
- "quasiparticle tunnelling" in Chinese : 準粒子隧道效應
- "superconductive tunnelling" in Chinese : 超導隧道效應
- "tunnelling footage" in Chinese : 開拓進尺
- "tunnelling gantry" in Chinese : 隧道用門式臺架
- "tunnelling machine" in Chinese : 隧道掘進機; 巷道掘進機
- "tunnelling operation" in Chinese : 隧道工程
- "tunnelling research" in Chinese : 隧道施工研究
Examples
- Hot electron tunneling mechanism of current collapse in gan hfet
溝道熱電子隧穿電流崩塌模型 - In this paper , the coherent transport characteristics of electrons tunneling through a quantum dot are investigated
摘要研究了電子隧穿通過量子點的相干輸運特性。 - It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假設隧道電子從硅進入氧化層和界面態(tài)的建立是輻射效應的恢復機理。 - It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模擬結(jié)果表明:退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態(tài)所占比例的不同影響器件的恢復率。 - The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響,觀測到明顯的庫侖阻塞效應和單電子隧穿效應,器件的工作溫度可達到77k以上。 - Transmission coefficient of electron tunneling through rectangular barrier has been calculated based on the exact solution of the one - dimensional time - independent schr ? dinger equation with the transfer matrix method ; furthermore , the dependence of the transmission coefficient on the effective masses and parameters of rectangular barrier also has been studied
摘要利用傳遞矩陣方法精確計算了一維定態(tài)薛定諤方程,求解出電子穿過矩形勢壘的透射系數(shù),進一步研究了該透射系數(shù)與有效質(zhì)量和矩形勢壘參數(shù)的關(guān)系。 - We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field . the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells . it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field . the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells . incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells . the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
對磁量子結(jié)構(gòu)中電子在外加恒定電場下的輸運性質(zhì)進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構(gòu)成的兩種磁量子結(jié)構(gòu)的傳輸概率和電流密度.計算結(jié)果表明,在相當寬廣的非共振電子入射能區(qū),外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構(gòu)成的雙磁壘結(jié)構(gòu),共振減弱;對于電子隧穿不同磁壘磁阱構(gòu)成的雙磁壘結(jié)構(gòu),無電場作用時的非完全共振在適當?shù)钠秒妷合罗D(zhuǎn)化為完全共振,這時的電子可實現(xiàn)理想的共振隧穿.研究同時表明,磁量子結(jié)構(gòu)中存在著顯著的量子尺寸效應和負微分電導
Related
"tunnel correction" in Chinese, "active electron" in Chinese, "electron optic" in Chinese, "electron traps" in Chinese, "electron p" in Chinese, "electron crystallography" in Chinese, "sigma electron" in Chinese, "electron impact" in Chinese, "electron defectoscope" in Chinese, "electron tube tester" in Chinese, "electron tube transducer" in Chinese, "electron tube voltmeter" in Chinese, "electron tube voltmetre" in Chinese, "electron tunneling" in Chinese, "electron type rock ore densimeter" in Chinese, "electron typing" in Chinese, "electron unit" in Chinese, "electron v l" in Chinese,
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